Micromorphology of AlN Epilayers on Sapphire Substrates
نویسندگان
چکیده
منابع مشابه
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 ar...
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The growth of high-quality indium ~In!-rich InXGa1 XN alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich InXGa1 XN alloys are inevitable phenomena that degrade the crystal quality of In-rich InXGa1 XN layers. Composition modulations were observed in the In-ri...
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The growth of high-quality indium (In)-rich In(X)Ga(1-X)N alloys is technologically important for applications to attain highly efficient green light-emitting diodes and solar cells. However, phase separation and composition modulation in In-rich In(X )Ga(1-X)N alloys are inevitable phenomena that degrade the crystal quality of In-rich In(X)Ga(1-X)N layers. Composition modulations were observed...
متن کاملNanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and deformation characteristics of the GaN epilayers, respectively. The AFM morphological studies revealed that pile-up phenomena occurred o...
متن کاملAngular dependence of surface acoustic wave characteristics in AlN thin films on a-plane sapphire substrates
AlN thin films have been grown on a-plane sapphire (Al2O3(112̄0)) substrates. X-ray diffraction measurements indicate the films are fully c-plane (0001) oriented with a full width at half maximum of the AlN(0002) rocking curves of 0.76–0.92◦. The epitaxial growth relationships have been determined by the reflection high energy electron diffraction analysis as AlN[11̄00]//Al2O3[0001] and AlN[112̄0]...
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ژورنال
عنوان ژورنال: DEStech Transactions on Computer Science and Engineering
سال: 2017
ISSN: 2475-8841
DOI: 10.12783/dtcse/cece2017/14582